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1. Identity statement
Reference TypeConference Abstract (Conference Proceedings)
Sitemtc-m21b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34P/3PGF4RE
Repositorysid.inpe.br/mtc-m21b/2017/08.25.17.08   (restricted access)
Last Update2017:10.03.11.56.44 (UTC) simone
Metadata Repositorysid.inpe.br/mtc-m21b/2017/08.25.17.08.24
Metadata Last Update2018:06.04.02.27.45 (UTC) administrator
Secondary KeyINPE--PRE/
Citation KeyPirralhoPeSoOkFoRaAb:2017:TrNePo
TitleTransition from negative to positive photoconductivity in p-type Pb1-xEuxTe films
Year2017
Access Date2024, May 18
Secondary TypePRE CN
Number of Files1
Size1035 KiB
2. Context
Author1 Pirralho, Marília de J. P.
2 Peres, Marcelo L.
3 Soares, Demétrio A. W.
4 Okasaki, Anderson K.
5 Fornari, Celso Israel
6 Rappl, Paulo Henrique de Oliveira
7 Abramof, Eduardo
Resume Identifier1
2
3
4
5
6 8JMKD3MGP5W/3C9JJ37
7 8JMKD3MGP5W/3C9JGUH
Group1
2
3
4
5 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
6 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1
2
3
4
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
7 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2
3
4
5 celso.fornari@inpe.br
6 paulo.rappl@inpe.br
7 eduardo.abramof@inpe.br
Conference NameBrazilian Workshop on Semiconductor Physics, 18 (BWSP)
Conference LocationMaresias, SP
Date14-18 ago.
Book TitleResumos
History (UTC)2017-08-25 17:08:49 :: simone -> administrator :: 2017
2017-09-18 04:40:57 :: administrator -> simone :: 2017
2017-10-03 11:56:44 :: simone -> administrator :: 2017
2018-01-09 11:47:05 :: administrator -> simone :: 2017
2018-01-09 18:26:59 :: simone -> administrator :: 2017
2018-06-04 02:27:45 :: administrator -> simone :: 2017
3. Content and structure
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Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
AbstractThe phenomenon of photoconductivity has been used as an important tool to investigate the presence of additional states within the band structure of semiconductors [1] and has provided basic knowledge that allowed the development of photodetector and sensor devices along the last decades [2]. We investigated the photoconductivity effect in p-type Pb1-xEuxTe films for x=0.01, 0.02, 0.03, 0.05 and 0.06 at T=300K. The measurements revealed a clear transition from negative to positive photoconductivity as the Eu content x is increased at room temperature. This transition is related to the metal-insulator transition that occurs due to the disorder originated from the introduction of Eu atoms and it is an Anderson transition. Our investigation found that, from the potential application point of view, the sample x=0.06 is more suitable, i.e. it presents an almost noise free signal and the higher photoconductivity amplitude response observed. The photoconductive for the sample with x=0.06 was further investigated in the temperature range of 77 300K and, surprisingly, multiple additional transitions were observed with amplitudes that reached around 200 times the original value before illumination. We show that this anomalous behavior is a consequence of the generation and recombination rates between the bands and the 4f level and a defect level located inside the bandgap. The main goal of this work is to make a prospective study of NPC effect in p-type Pb1-xEuxTe films in both sides of the metal-insulator transition aiming to possible new applications in the development of photonic devices that operate from low temperature up to room temperature. Acknowledgments: The authors would like to acknowledge CAPES and FAPEMIG for support. References: [1] M. M. Furchi et al, Nano Letters 14, 6165-6170 (2014); [2] R. Jaramillo et al, Jour. Appl. Phys. 119, 035101 (2016).
AreaFISMAT
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Transition from negative...
Arrangement 2urlib.net > BDMCI > Fonds > Produção pgr ATUAIS > CMS > Transition from negative...
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Reader Groupadministrator
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Visibilityshown
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Update Permissionnot transferred
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Linking8JMKD3MGP3W34P/3NAEMRH
Mirror Repositorysid.inpe.br/mtc-m21b/2013/09.26.14.25.22
Next Higher Units8JMKD3MGPCW/3ESR3H2
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Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.57.50 3
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 2
Host Collectionsid.inpe.br/mtc-m21b/2013/09.26.14.25.20
6. Notes
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